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intrinsic semiconductor - перевод на немецкий
![[[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] developed the bipolar [[point-contact transistor]] in 1947.](https://commons.wikimedia.org/wiki/Special:FilePath/Bardeen Shockley Brattain 1948.JPG?width=200 "[[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] developed the bipolar [[point-contact transistor]] in 1947.")
![[[Karl Ferdinand Braun]] developed the [[crystal detector]], the first [[semiconductor device]], in 1874.](https://commons.wikimedia.org/wiki/Special:FilePath/Ferdinand Braun.jpg?width=200 "[[Karl Ferdinand Braun]] developed the [[crystal detector]], the first [[semiconductor device]], in 1874.")
![ingot]] of [[monocrystalline silicon]]](https://commons.wikimedia.org/wiki/Special:FilePath/Monokristalines Silizium für die Waferherstellung.jpg?width=200 "ingot]] of [[monocrystalline silicon]]")
![[[Silicon]] crystals are the most common semiconducting materials used in [[microelectronics]] and [[photovoltaics]].](https://commons.wikimedia.org/wiki/Special:FilePath/Silicon.jpg?width=200 "[[Silicon]] crystals are the most common semiconducting materials used in [[microelectronics]] and [[photovoltaics]].")
![drain and source]] respectively.](https://commons.wikimedia.org/wiki/Special:FilePath/CMOS Inverter.svg?width=200 "drain and source]] respectively.")
![[[NAND gate]] in CMOS logic](https://commons.wikimedia.org/wiki/Special:FilePath/CMOS NAND.svg?width=200 "[[NAND gate]] in CMOS logic")
![The [[physical layout]] of a NAND circuit. The larger regions of N-type diffusion and P-type diffusion are part of the transistors. The two smaller regions on the left are taps to prevent [[latchup]].](https://commons.wikimedia.org/wiki/Special:FilePath/CMOS NAND Layout.svg?width=200 "The [[physical layout]] of a NAND circuit. The larger regions of N-type diffusion and P-type diffusion are part of the transistors. The two smaller regions on the left are taps to prevent [[latchup]].")
![Simplified process of fabrication of a CMOS inverter on p-type substrate in semiconductor microfabrication. In step 1, [[silicon dioxide]] layers are formed initially through [[thermal oxidation]] Note: Gate, source and drain contacts are not normally in the same plane in real devices, and the diagram is not to scale.](https://commons.wikimedia.org/wiki/Special:FilePath/CMOS fabrication process.svg?width=200 "Simplified process of fabrication of a CMOS inverter on p-type substrate in semiconductor microfabrication. In step 1, [[silicon dioxide]] layers are formed initially through [[thermal oxidation]] Note: Gate, source and drain contacts are not normally in the same plane in real devices, and the diagram is not to scale.")
Определение
Википедия
An intrinsic (pure) semiconductor, also called an undoped semiconductor or i-type semiconductor, is a pure semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities. In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p. This may be the case even after doping the semiconductor, though only if it is doped with both donors and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped. This mean that some conductors are both intrinsic as well as extrinsic but only if n (electron donor dopant/excited electrons) is equal to p (electron acceptor dopant/vacant holes that act as positive charges).
The electrical conductivity of chemically pure semiconductors can still be affected by crystallographic defects of technological origin (like vacancies), some of which can behave similar to dopants. Their effect can often be neglected, though, and the number of electrons in the conduction band is then exactly equal to the number of holes in the valence band. The conduction of current of intrinsic semiconductor is enabled purely by electron excitation across the band-gap, which is usually small at room temperature except for narrow-bandgap semiconductors, like Hg
0.8Cd
0.2Te.
The conductivity of a semiconductor can be modeled in terms of the band theory of solids. The band model of a semiconductor suggests that at ordinary temperatures there is a finite possibility that electrons can reach the conduction band and contribute to electrical conduction. A silicon crystal is different from an insulator because at any temperature above absolute zero, there is a non-zero probability that an electron in the lattice will be knocked loose from its position, leaving behind an electron deficiency called a "hole". If a voltage is applied, then both the electron and the hole can contribute to a small current flow.
